MOSFET,NN CH,30V,3.6A,PQFN22; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; Power Dissipation Pd:1.5W; Transistor Case Style:QFN; No. of Pins:6; Operating Temp
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.6A
Rds On (Max) @ Id, Vgs 63 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10µA
Gate Charge (Qg) @ Vgs 2.8nC @ 4.5V
Input Capacitance (Ciss) @ Vds 270pF @ 25V
Power - Max 1.5W
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad