Transistor: N-MOSFET; unipolar; HEXFET; 20V; 8.5A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs 11.7 mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10µA
Gate Charge (Qg) @ Vgs 14nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1110pF @ 10V
Power - Max 1.98W
Mounting Type Surface Mount
Package / Case 6-PowerVDFN