Transistor: N-MOSFET; unipolar; HEXFET; 100V; 180A
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Rds On (Max) @ Id, Vgs 4.3 mOhm @ 110A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 130nC @ 4.5V
Input Capacitance (Ciss) @ Vds 11360pF @ 50V
Power - Max 370W
Mounting Type Through Hole
Package / Case TO-220-3