Transistor: N-MOSFET; unipolar; HEXFET; 2.5W
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8.1A
Rds On (Max) @ Id, Vgs 17.9 mOhm @ 8.1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10µA
Gate Charge (Qg) @ Vgs 11nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1020pF @ 25V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)