Transistor: N-MOSFET; unipolar; HEXFET; 30V; 200A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 260A (Tc)
Rds On (Max) @ Id, Vgs 3 mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 110nC @ 4.5V
Input Capacitance (Ciss) @ Vds 5890pF @ 15V
Power - Max 330W
Mounting Type Through Hole
Package / Case TO-220-3