Transistor: N-MOSFET; unipolar; HEXFET; 40V; 200A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Rds On (Max) @ Id, Vgs 3.1 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) @ Vgs 110nC @ 5V
Input Capacitance (Ciss) @ Vds 5080pF @ 25V
Power - Max 230W
Mounting Type Through Hole
Package / Case TO-220-3