Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 104A (Tc)
Rds On (Max) @ Id, Vgs 8 mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 68nC @ 4.5V
Input Capacitance (Ciss) @ Vds 3445pF @ 25V
Power - Max 2.4W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA