Transistor: N-MOSFET; unipolar; HEXFET; 40V; 110A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Rds On (Max) @ Id, Vgs 6.5 mOhm @ 78A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 100nC @ 4.5V
Input Capacitance (Ciss) @ Vds 5330pF @ 25V
Power - Max 3.8W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB