Transistor: N-MOSFET; unipolar; HEXFET; 55V; 64A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Rds On (Max) @ Id, Vgs 14 mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 81nC @ 10V
Input Capacitance (Ciss) @ Vds 1970pF @ 25V
Power - Max 3.8W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB