Transistor: N-MOSFET; unipolar; HEXFET; 60V; 55A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Rds On (Max) @ Id, Vgs 16.5 mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 67nC @ 10V
Input Capacitance (Ciss) @ Vds 1812pF @ 25V
Power - Max 115W
Mounting Type Through Hole
Package / Case TO-220-3