Transistor: P-MOSFET; unipolar; HEXFET; -55V; -18A
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Rds On (Max) @ Id, Vgs 110 mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) @ Vds 650pF @ 25V
Power - Max 57W
Mounting Type Through Hole
Package / Case TO-251-3 Long Leads, IPak, TO-251AB