Transistor: N-MOSFET; unipolar; HEXFET; 150V; 33A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Rds On (Max) @ Id, Vgs 42 mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) @ Vds 1750pF @ 50V
Power - Max 144W
Mounting Type Through Hole
Package / Case TO-251-3 Long Leads, IPak, TO-251AB