Transistor: N-MOSFET; unipolar; HEXFET; 100V; 15A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Rds On (Max) @ Id, Vgs 115 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 44nC @ 10V
Input Capacitance (Ciss) @ Vds 640pF @ 25V
Power - Max 79W
Mounting Type Through Hole
Package / Case TO-251-3 Long Leads, IPak, TO-251AB