Transistor: P-MOSFET; unipolar; HEXFET; -55V; -11A
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Rds On (Max) @ Id, Vgs 175 mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 19nC @ 10V
Input Capacitance (Ciss) @ Vds 350pF @ 25V
Power - Max 38W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63