Transistor: N-MOSFET; unipolar; HEXFET; 100V; 9.1A
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Rds On (Max) @ Id, Vgs 210 mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) @ Vds 330pF @ 25V
Power - Max 48W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63