Transistor: N-MOSFET; unipolar; HEXFET; 200V; 65A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Rds On (Max) @ Id, Vgs 25 mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 98nC @ 10V
Input Capacitance (Ciss) @ Vds 4600pF @ 25V
Power - Max 330W
Mounting Type Through Hole
Package / Case TO-247-3