Transistor: N-MOSFET; unipolar; HEXFET; 40V; 350A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Rds On (Max) @ Id, Vgs 1.7 mOhm @ 195A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 330nC @ 10V
Input Capacitance (Ciss) @ Vds 8920pF @ 25V
Power - Max 380W
Mounting Type Through Hole
Package / Case TO-247-3