Transistor: N-MOSFET; unipolar; HEXFET; 25V; 9.9A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs 13 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA
Gate Charge (Qg) @ Vgs 10.4nC @ 10V
Input Capacitance (Ciss) @ Vds 653pF @ 10V
Power - Max 2.1W
Mounting Type Surface Mount
Package / Case 6-VQFN