Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs 4.3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50µA
Gate Charge (Qg) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) @ Vds 1797pF @ 25V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case 8-VQFN Exposed Pad