Transistor: N-MOSFET; unipolar; 100V; 2.3A; 2.3W;
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 2.3A
Rds On (Max) @ Id, Vgs 195 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 10µA
Gate Charge (Qg) @ Vgs 6.3nC @ 10V
Input Capacitance (Ciss) @ Vds 251pF @ 25V
Power - Max 2.3W
Mounting Type Surface Mount
Package / Case 8-PowerVDFN