Transistor: N-MOSFET; unipolar; HEXFET; 40V; 117A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 85A (Tc)
Rds On (Max) @ Id, Vgs 3.3 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100µA
Gate Charge (Qg) @ Vgs 93nC @ 10V
Input Capacitance (Ciss) @ Vds 3174pF @ 25V
Power - Max 78W
Mounting Type Surface Mount
Package / Case 8-TQFN Exposed Pad