MOSFET, N CH, 25V, 51A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:26W; Transistor Case Style:PQFN; No. of Pins:8; Operating Temperat
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs 6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA
Gate Charge (Qg) @ Vgs 14.5nC @ 10V
Input Capacitance (Ciss) @ Vds 988pF @ 13V
Power - Max 3.6W
Mounting Type Surface Mount
Package / Case 8-VQFN