MOSFET, N CH, 25V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:3.6W; Transistor Case Style:QFN; No. of Pins:8; Operating Tempe
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 1.15 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150µA
Gate Charge (Qg) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) @ Vds 7174pF @ 13V
Power - Max 3.6W
Mounting Type Surface Mount
Package / Case 8-VQFN