Transistor: N-MOSFET; unipolar; HEXFET; 40V; 22A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 4.3 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) @ Vgs 65nC @ 10V
Input Capacitance (Ciss) @ Vds 2460pF @ 25V
Power - Max 3.6W
Mounting Type Surface Mount
Package / Case 8-VQFN Exposed Pad