Transistor: N-MOSFET; unipolar; HEXFET; 100V; 9.3A
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs 18 mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100µA
Gate Charge (Qg) @ Vgs 36nC @ 10V
Input Capacitance (Ciss) @ Vds 1510pF @ 50V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-PowerVDFN