Transistor: N-MOSFET; unipolar; HEXFET; 250V; 3.8A
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 3.8A
Rds On (Max) @ Id, Vgs 100 mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 5V @ 150µA
Gate Charge (Qg) @ Vgs 56nC @ 10V
Input Capacitance (Ciss) @ Vds 2150pF @ 50V
Power - Max 3.6W
Mounting Type Surface Mount
Package / Case 8-VQFN