Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 206A (Tc)
Rds On (Max) @ Id, Vgs 3.7 mOhm @ 95A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 200nC @ 10V
Input Capacitance (Ciss) @ Vds 7360pF @ 25V
Power - Max 300W
Mounting Type Through Hole
Package / Case -