Transistor: N-MOSFET; unipolar; HEXFET; 200V; 18A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Rds On (Max) @ Id, Vgs 100 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100µA
Gate Charge (Qg) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 50V
Power - Max 100W
Mounting Type Through Hole
Package / Case TO-220-3