Transistor: N-MOSFET x2; unipolar; HEXFET; 30V; 3.
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.5A
Rds On (Max) @ Id, Vgs 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 14nC @ 10V
Input Capacitance (Ciss) @ Vds 190pF @ 15V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)