FET Type | MOSFET P-Channel, Metal Oxide |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Rds On (Max) @ Id, Vgs | 11.9 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 25µA |
Gate Charge (Qg) @ Vgs | 52nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1680pF @ 25V |
Power - Max | 2.5W |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |