Transistor: N-MOSFET; unipolar; HEXFET; 25V; 25A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 25A (Ta)
Rds On (Max) @ Id, Vgs 2.7 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100µA
Gate Charge (Qg) @ Vgs 53nC @ 4.5V
Input Capacitance (Ciss) @ Vds 5305pF @ 13V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)