Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Rds On (Max) @ Id, Vgs 5 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA
Gate Charge (Qg) @ Vgs 50nC @ 4.5V
Input Capacitance (Ciss) @ Vds 4500pF @ 20V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)