Transistor: N-MOSFET; unipolar; 30V; 18A; 3.1W; SO
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Rds On (Max) @ Id, Vgs 6.5 mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 60nC @ 5V
Input Capacitance (Ciss) @ Vds 5500pF @ 16V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)