Transistor: N-MOSFET; unipolar; 100V; 20A; 3.3W; D
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs 3.5 mOhm @ 74A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 300nC @ 10V
Input Capacitance (Ciss) @ Vds 11560pF @ 25V
Power - Max 3.3W
Mounting Type Surface Mount
Package / Case -