MOSFET, DUAL, P, TSSOP-8; Transistor Polarity:P Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.2V; Power Dissipation Pd:1W; Transistor Case Style:TSSOP; No. of Pins:8; Operating Temperatu
Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.7A
Rds On (Max) @ Id, Vgs 30 mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) @ Vgs 39nC @ 5V
Input Capacitance (Ciss) @ Vds 1700pF @ 15V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)