Transistor: N/P-MOSFET; unipolar; 20V; 2.4A; 1.25W
Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.4A, 1.7A
Rds On (Max) @ Id, Vgs 140 mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) @ Vgs 8nC @ 4.5V
Input Capacitance (Ciss) @ Vds 260pF @ 15V
Power - Max 1.25W
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)