Transistor: N-MOSFET; unipolar; HEXFET; 40V; 9A; 2
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Rds On (Max) @ Id, Vgs 17 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 23nC @ 4.5V
Input Capacitance (Ciss) @ Vds 2000pF @ 20V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)