Transistor: N/P-MOSFET; unipolar; 12V; 6.3A; 2W; S
Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 6.3A, 3A
Rds On (Max) @ Id, Vgs 34 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 8.6nC @ 4.5V
Input Capacitance (Ciss) @ Vds 640pF @ 9V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)