MOSFET, DUAL N/P-CHANNEL, 20V, 4.3A, SO-8, Q101 QUALIFIED
Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.2A, 4.3A
Rds On (Max) @ Id, Vgs 50 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) @ Vgs 20nC @ 4.5V
Input Capacitance (Ciss) @ Vds 660pF @ 15V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)