Transistor: N-MOSFET; unipolar; 25V; 170A; 54W; Di
Specification
FET Type MOSFET N-Channel, Schottky, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs 1.3 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 2.1V @ 100µA
Gate Charge (Qg) @ Vgs 39nC @ 4.5V
Input Capacitance (Ciss) @ Vds 4160pF @ 13V
Power - Max 2.1W
Mounting Type Surface Mount
Package / Case -