Transistor: N-MOSFET; unipolar; HEXFET; 150V; 28A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 4.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs 56 mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) @ Vgs 36nC @ 10V
Input Capacitance (Ciss) @ Vds 1411pF @ 25V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case -