Transistor: N-MOSFET; unipolar; HEXFET; 30V; 14A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs 7.3 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25µA
Gate Charge (Qg) @ Vgs 17nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1430pF @ 15V
Power - Max 2.2W
Mounting Type Surface Mount
Package / Case -