Transistor: N-MOSFET; unipolar; HEXFET; 25V; 61A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 61A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs 0.7 mOhm @ 61A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150µA
Gate Charge (Qg) @ Vgs 96nC @ 4.5V
Input Capacitance (Ciss) @ Vds 6500pF @ 13V
Power - Max 4.3W
Mounting Type Surface Mount
Package / Case -