Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs 3.8 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA
Gate Charge (Qg) @ Vgs 20nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1810pF @ 13V
Power - Max 2.2W
Mounting Type Surface Mount
Package / Case -