Transistor: N-MOSFET; unipolar; HEXFET; 80V; 55A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Rds On (Max) @ Id, Vgs 15 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100µA
Gate Charge (Qg) @ Vgs 31nC @ 10V
Input Capacitance (Ciss) @ Vds 1320pF @ 25V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case -