Transistor: N-MOSFET; unipolar; 100V; 8.3A; 89W; D
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 8.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs 22 mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100µA
Gate Charge (Qg) @ Vgs 31nC @ 10V
Input Capacitance (Ciss) @ Vds 1360pF @ 25V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case -