Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; D
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs 62 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4.8V @ 25µA
Gate Charge (Qg) @ Vgs 11.7nC @ 10V
Input Capacitance (Ciss) @ Vds 530pF @ 25V
Power - Max 2.2W
Mounting Type Surface Mount
Package / Case -