Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 10.3A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs 13 mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id 4.8V @ 150µA
Gate Charge (Qg) @ Vgs 47nC @ 10V
Input Capacitance (Ciss) @ Vds 2210pF @ 25V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case -