Transistor: N-MOSFET; unipolar; 20V; 18A; 42W; Dir
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs 4.5 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA
Gate Charge (Qg) @ Vgs 27nC @ 4.5V
Input Capacitance (Ciss) @ Vds 2420pF @ 10V
Power - Max 2.2W
Mounting Type Surface Mount
Package / Case -