Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs 5.6 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) @ Vgs 17nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1410pF @ 10V
Power - Max 2.3W
Mounting Type Surface Mount
Package / Case -